SMBTA42/MMBTA42 NPN Silicon High-Voltage Transistors • Low collector-emitter saturation voltage 3 2 • Complementary types: 1 SMBTA92 / MMBTA92(PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA42/MMBTA42 s1D 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 300 V CEO Collector-base voltage V 300 CBO Emitter-base voltage V 6 EBO Collector current I 500 mA C Base current I 100 B Total power dissipation- P 360 mW tot T ≤ 74 °C S Junction temperature T 150 °C j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) R ≤ 210 K/W thJS 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-12-19

SMBTA42/MMBTA42 Electrical Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V 300 - - V (BR)CEO I = 1 mA, I = 0 C B Collector-base breakdown voltage V 300 - - (BR)CBO I = 100 µA, I = 0 C E Emitter-base breakdown voltage V 6 - - (BR)EBO I = 100 µA, I = 0 E C Collector-base cutoff current I µA CBO V = 200 V, I = 0 - - 0.1 CB E V = 200 V, I = 0 , T = 150 °C - - 20 CB E A Emitter-base cutoff current I - - 100 nA EBO V = 5 V, I = 0 EB C DC current gain1) h - FE I = 1 mA, V = 10 V 25 - - C CE I = 10 mA, V = 10 V 40 - - C CE I = 30 mA, V = 10 V 40 - - C CE Collector-emitter saturation voltage1) V - - 0.5 V CEsat I = 20 mA, I = 2 mA C B Base emitter saturation voltage1) V - - 0.9 BEsat I = 20 mA, I = 2 mA C B AC Characteristics Transition frequency f 50 70 - MHz T I = 10 MHz, V = 20 V, f = 100 MHz C CE Collector-base capacitance C - - 3 pF cb V = 20 V, f = 1 MHz CB 1Pulse test: t < 300µs; D < 2% 2 2011-12-19

SMBTA42/MMBTA42 DC current gain h = ƒ(I ) Operating range I = ƒ(V ) FE C C CEO V = 10 V T = 25°C, D = 0 CE A SMBTA 42/43 EHP00844 10 3 103 mA 5 10 µs h FE 10 2 102 C 100 µs I 5 10 1 1 ms DC 101 10 0 5 100 10 -1 10-1 5 100 5 101 5 102 mA 103 10 0 10 1 10 2 V 10 3 Ι VCE C Collector current I = ƒ(V ) Collector cutoff current I = ƒ(T ) C BE CBO A V = 10V V = 160 V CE CBO 103SMBTA 42/43 EHP00843 104SMBTA 42/43 EHP00842 nA mA Ι C max 103 Ι 102 CBO 5 5 102 5 101 5 typ 101 5 100 100 5 5 10-1 10-1 0 0.5 1.0 V 1.5 0 50 100 C 150 V T BE A 3 2011-12-19

SMBTA42/MMBTA42 Transition frequency fT = ƒ(IC) Collector-base capacitance Ccb = ƒ(VCB) VCE = 10 V, f = 100 MHz Emitter-base capacitance Ceb = ƒ(VEB) 103 SMBTA 42/43 EHP00839 90 MHz pF f T ) 70 B E C (B 60 C C 50 102 40 CEB 5 30 20 10 CCB 101 0 100 5 101 5 102 mA 5 103 0 4 8 12 16 V 22 Ι VCB(VEB C Total power dissipation P = ƒ(T ) Permissible Pulse Load R = ƒ(t ) tot S thJS p 400 10 3 mW K/W 320 10 2 280 S ot hJ Pt 240 Rt 200 10 1 D=0.5 0.2 160 0.1 0.05 120 0.02 10 0 0.01 80 0.005 0 40 00 15 30 45 60 75 90 105 120 °C 150 10 -11 0 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 T t S p 4 2011-12-19

SMBTA42/MMBTA42 Permissible Pulse Load P /P = ƒ(t ) totmax totDC p 103 SMBTA 42/43 EHP00840 P totmax 5 t tp P p totDC D= T T 102 D = 0 0.005 5 0.01 0.02 0.05 0.1 0.2 101 0.5 5 100 10-6 10-5 10-4 10-3 10-2 s 100 t p 5 2011-12-19

Package SOT23 SMBTA42/MMBTA42 Package Outline N. 1±0.1 MI 2.9±0.1 B 15 0.1 MAX. 0. 0.4-+00..0151) 1 3 2 C 2.4±0.15 10˚ MAX. 0.08...0.10˚ MAX.15 A1.3±0.1 0.95 0...8˚ 1.9 0.25M B C 0.2M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 9 0. 3 1. 0.8 1.2 0.9 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 0.2 2.132.65 8 Pin 1 3.15 1.15 6 2011-12-19

SMBTA42/MMBTA42 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-12-19

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